J. J. Ebers Award

The J. J. Ebers Award was established in 1971 to foster progress in electron devices. It commemorates Jewell James Ebers, whose contributions, particularly to transistors, shaped the understanding and technology of electron devices. It is presented annually to one or more individuals who have made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. The recipient (or recipients) is awarded a certificate and check for $5,000, presented at the International Electron Devices Meeting.

Recipients The past recipients are:

1971 John L. Moll 1972 Charles W. Mueller 1973 Herbert Kroemer 1974 Andrew S. Grove 1975 Jacques I. Pankove 1976 Marion E. Hines 1977 Anthony E. Siegman 1978 Hung C. Lin 1979 James M. Early 1980 James D. Meindl 1981 Chih-Tang Sah 1982 Arthur G. Milnes 1983 Adolf Goetzberger 1984 Izuo Hayashi 1985 Walter F. Kosonocky 1986 Pallab K. Chatterjee 1987 Robert W. Dutton 1988 Al F. Tasch Jr. 1989 Tak H. Ning 1990 Yoshiyuki Takeishi 1991 Simon Min Sze 1992 Louis C. Parrillo 1993 Karl Hess 1994 Alfred U. Macrae 1995 Martin A. Green 1996 Tetsushi Sakai 1997 Marvin H. White 1998 B. Jayant Baliga 1999 James T. Clemens 2000 Bernard S. Meyerson 2001 Hiroshi Iwai 2002 Lester F. Eastman 2003 James D. Plummer 2004 Jerry G. Fossum 2005 Bijan Davari "for contributions to deep-submicron CMOS technology and their impact on the IC industry" 2006 Ghavam Shahidi "for contributions and leadership in the development of Silicon-On-Insulator CMOS technology" 2007 Stephen J. Pearton "for developing advanced compound-semiconductor processing techniques, and clarifying the roles of defects and impurities in compound-semiconductor devices" 2008 Mark R. Pinto "for contributions to widely applied semiconductor technology simulation tools" 2009 Baruch Levush "for contributions to the development of widely applied simulation tools in the vacuum electronics industry" 2010 Mark E. Law "for contributions to widely used silicon integrated circuit process modeling" 2011 Stuart Wenham "for technical contributions and successful commercialization of high efficiency solar cells" 2012 Yuan Taur "for contributions to the advancement of several generations of CMOS process technologies" 2013 Nobukazu Teranishi "for development of the pinned photodiode concept widely used in image sensors" 2014 Joachim N. Burghartz "for contributions to integrated spiral inductors for Wireless communication ICs and ultra-thin silicon devices for emerging flexible electronics" 2015 Jack Yuan-Chen Sun "for sustained leadership and technical contributions to energy efficient foundry CMOS technologies" 2016 Jaroslav Hynecek "for the pioneering work and advancement of CCD and CMOS image sensor technologies" 2017 Kang L. Wang "for contributions and leadership in strained SiGe and magnetic memory technologies" 2018 Michael Shur "for pioneering the concept of ballistic transport in nanoscale semiconductor devices" 2019 H.-S. Philip Wong "for pioneering contributions to the scaling of silicon devices and technology" 2020 Arokia Nathan ”for his work with thin-film transistor and flexible/foldable electronics integration strategies.Portilla, L., Loganathan, K., Faber, H. et al. Wirelessly powered large-area electronics for the Internet of Things. Nat Electron 6, 10–17 (2023) 2021 Bruce Gnade "for materials contributions to CMOS and flexible electronics technologies" 2022 Albert Wang "for pioneering contributions to reliability of 3D heterogeneous integration in Integrated Circuits" 2023 Mukta Farooq "for development of emerging heterogeneous integration architectures for 3D ICs" 2024 Yue Kuo "for oustanding contributions to thin film transistors" 2025 Anthony Yen "for sustained contributions and leadership in advancing semiconductor lithography, especially the development of extreme ultraviolet lithography"

J. J. Ebers Award

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