The International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects in Semiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16. The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings.

The most recent ICDS (the 33nd) was at Fudan University, Shanghai, September 15−19th, 2025. Both the Corbett and Haller prizes were awarded at the meeting.

The next ICDS (34) will be at the University of Strathclyde, Glasgow between July 26−29th, 2027, and will include a tutorial day on the 25th.

Corbett Prize

The Corbett Prize is awarded at the meetings to a young scientist for an outstanding contribution given at the ICDS. The prize is named in memory of James W. Corbett, one of the pioneers in the field of defects in semiconductors, who was known for helping and encouraging young researchers. The prize has been awarded at every ICDS since 1995.

Recipients Year Location Awardee(s) Notes 2025 Fudan University, Shanghai, China Igor Prozheev University of Helsinki Menglin Huang Fudan University 2023 Rehoboth Beach, Delaware, United States Brendan McCullian University of Cornell Fangzhou Zhao UCSB, Santa Barbara 2021 Oslo, Norway Robert Karsthof Post-Doc at Centre for Materials Science and Nanotechnology Physics, University of Oslo (PhD in 2018) 2019 Seattle, United States Kunal Mukherjee UCSB, Santa Barbara Christian Zimmermann University of Oslo, Norway 2017 Matsue, Japan Liwen Sang, Independent scientist at National Institute for Materials Science, Japan (PhD in 2010) Elena Pascal Post-doctoral researcher, Material Science and Engineering, Carnegie Mellon, USA 2015 Espoo, Finland Thomas Auzelle, Scientist at Paul Drude Institute in Berlin, Germany (PhD in 2015) Jan E. Stehr Assistant Prof at Linköping University (PhD in 2011) 2013 Bologna, Italy Daniel José da Silva Post-Doc at KU Leuven (PhD in 2014) 2011 Nelson, New Zealand Ben Green Research scientist at Element Six, UK (PhD in 2013) 2009 St Petersburg, Russia Yoshihiro Gohda Professor at Tokyo Institute of Technology, Japan (PhD in 2003) Pavel Petrov Senior Scientist at Ioffe Institute, Russia (PhD in 2001) 2007 Albuquerque, United States Fadwa El-Mellouhi Senior Scientist at Qatar Energy and Environment Research Institute, Qatar (PhD in 2006) 2005 Awaji Island, Japan Hannes Raebiger Professor at Yokohama National University, Japan (PhD in 2006) Savas Berber Professor at Gebze Technical University, Turkey (PhD in 2004) Sukit Limpijumnong Professor at Suranaree University of Technology, Thailand (PhD in 2000) 2003 Aarhus, Denmark Naoki Fukata Group leader at National Institute for Materials Science, Japan (PhD in 1998) 2001 Giessen, Germany Yong-Sung Kim Principal Researcher at Korea Research Institute of Standards and Science, South Korea (PhD in 2002) Benjamin Hourahine Senior Lecturer at University of Strathclyde (PhD in 2000) 1999 California, United States Ant Ural Professor at University of Florida (PhD in 2001) 1997 Aveiro, Portugal Joanne E. Gower King's College London Tomas Hallberg Linköping University, Deputy Research Director at Swedish Defence Research Agency (PhD in 1995) Tomi Mattila Helsinki University of Technology, Senior Scientist at VTT Technical Research Centre of Finland (PhD in 1997) 1995 Sendai, Japan Yasunori Mochizuki Vice President for Central Research Laboratories, NEC (PhD in 1987) Kohei M. Itoh Professor at Keio University, Japan (PhD in 1994)

Haller Prize

Eugene E. Haller was a major figure in the semiconductor community and an inspiring mentor for students. The Haller Prize is given to the best graduate student(s) presentation at each ICDS since 2023.

Recipients Year Location Awardee(s) Notes 2025 Fudan, China Christopher Dawe University of Manchester Iuliia Zhelezova University of Helsinki 2023 Rehoboth Beach, United States Sarah Thompson University of Pennsylvania Igor Prozheev University of Helsinki

Conference locations

The ICDS venue often rotates between locations in Europe, North America and the far East.

Conference name Location Dates Proceedings ICDS 35 Okayama, Japan 29 July–3 August 2029 ICDS 34 Glasgow, Scotland 26–30 July 2027 ICDS 33 Fudan University, Shanghai China 14–19 September 2025 J. of Semiconductors ICDS 32 Delaware, United States 10–15 September 2023 J. Appl. Phys. ICDS 31 Oslo, Norway 25–30 July 2021 J. Appl. Phys. ICDS 30 Seattle, United States 21–26 July 2019 J. Appl. Phys. ICDS 29 Matsue, Japan 31 July–4 August 2017 J. Appl. Phys. ICDS 28 Espoo, Finland 27–31 July 2015 J. Appl. Phys ICDS 27 Bologna, Italy 21–26 July 2013 AIP Conference Proceedings ICDS 26 Nelson, New Zealand 17–22 July 2011 Physica B ICDS 25 St Petersburg, Russia 20–24 July 2009 Physica B ICDS 24 Albuquerque, United States 22–37 July 2007 Physica B ICDS 23 Awaji Island, Japan 24–29 July 2005 Physica B ICDS 22 Århus, Denmark 28 July–1 August 2003 Physica B ICDS 21 Giessen, Germany 16–20 July 2001 Physica B ICDS 20 Berkeley, California, United States 26–30 July 1999 Physica B ICDS 19 Aveiro, Portugal 21–25 July 1997 Trans Tech ICDS 18 Sendai, Japan 23–28 July 1995 Trans Tech ICDS 17 Gmunden, Austria 18–23 July 1993 Trans Tech ICDS 16 Bethlehem, Pennsylvania, United States 22–26 July 1991 Trans Tech ICDS 15 Budapest, Hungary 22–26 August 1988 Trans Tech ICDS 14 Paris, France 18–22 August 1986 Trans Tech ICDS 13 Coronado, California, United States 12–17 August 1984 Metallurgical Society of AIME ICDS 12 Amsterdam, Netherlands 12 August–3 September 1982 Physica B+C ICDS 11 Oiso, Japan 8–11 September 1980 Institute of Physics Publishing ICDS 1 Gatlinburg, Tennessee, United States May 1959 J. Appl. Phys.

Related Conferences

The Gordon Research Conferences host a regular semiconductor defect meeting in alternating years to the ICDS. The Extended Defects in Semiconductors conference (EDS).

See also Semiconductors Doping (semiconductor) Crystallographic defect

References