Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes.

Timeline of MOSFET demonstrations

PMOS and NMOS + MOSFET (PMOS and NMOS) demonstrations Date Channel length Oxide thickness MOSFET logic Researcher(s) Organization 20,000 nm 100 nmPMOS Mohamed M. Atalla, Dawon Kahng Bell Telephone Laboratories NMOS 10,000 nm nmPMOS Mohamed M. Atalla, Dawon Kahng Bell Telephone Laboratories NMOS 8,000 nm150 nmNMOS Chih-Tang Sah, Otto Leistiko, A.S. Grove Fairchild Semiconductor 5,000 nm170 nmPMOS1,000 nmPMOSRobert H. Dennard, Fritz H. Gaensslen, Hwa-Nien YuIBM T.J. Watson Research Center 19737,500 nmNMOSSohichi SuzukiNEC6,000 nmPMOSToshiba 1,000 nm nm NMOS Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu IBM T.J. Watson Research Center 500 nm1,500 nm nmNMOSRyoichi Hori, Hiroo Masuda, Osamu MinatoHitachi3,000 nmNMOSIntel1,000 nm25 nmNMOSWilliam R. Hunter, L. M. Ephrath, Alice CramerIBM T.J. Watson Research Center100 nm5 nmNMOSToshio Kobayashi, Seiji Horiguchi, K. KiuchiNippon Telegraph and Telephone 150 nm2.5 nmNMOSToshio Kobayashi, Seiji Horiguchi, M. Miyake, M. OdaNippon Telegraph and Telephone75 nmNMOSStephen Y. Chou, Henry I. Smith, Dimitri A. AntoniadisMIT60 nmNMOSStephen Y. Chou, Henry I. Smith, Dimitri A. AntoniadisMIT200 nm3.5 nmPMOSToshio Kobayashi, M. Miyake, K. DeguchiNippon Telegraph and Telephone40 nmNMOSMizuki Ono, Masanobu Saito, Takashi YoshitomiToshiba16 nmPMOSHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC50 nm1.3 nmNMOSKhaled Z. Ahmed, Effiong E. Ibok, Miryeong SongAdvanced Micro Devices (AMD)6 nmPMOSBruce Doris, Omer Dokumaci, Meikei IeongIBM 3 nmPMOS Hitoshi Wakabayashi, Shigeharu Yamagami NEC NMOS

CMOS (single-gate) + Complementary MOSFET (CMOS) demonstrations (single-gate) Date Channel length Oxide thickness Researcher(s) Organization Chih-Tang Sah, Frank WanlassFairchild Semiconductor196820,000 nm nmRCA Laboratories197010,000 nm nmRCA Laboratories2,000 nmA. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. WhiteMitel Semiconductor3,000 nmToshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio SakaiHitachi Central Research Laboratory 1,200 nm nmR.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. PelleyIntel900 nm nmTsuneo Mano, J. Yamada, Junichi Inoue, S. NakajimaNippon Telegraph and Telephone (NTT)1,000 nm nmG.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu TingIBM T.J. Watson Research Center 800 nm17 nmT. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige HiranoMatsushita700 nm12 nmTsuneo Mano, J. Yamada, Junichi Inoue, S. NakajimaNippon Telegraph and Telephone (NTT)500 nm12.5 nmHussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. HaddadIBM T.J. Watson Research Center250 nmNaoki Kasai, Nobuhiro Endo, Hiroshi KitajimaNEC400 nm nmM. Inoue, H. Kotani, T. Yamada, Hiroyuki YamauchiMatsushita100 nmGhavam G. Shahidi, Bijan Davari, Yuan Taur, James D. WarnockIBM T.J. Watson Research Center1993350 nmSony 1996150 nmMitsubishi Electric1998180 nmTSMC5 nmHitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki IkezawaNEC

Multi-gate MOSFET (MuGFET) + Multi-gate MOSFET (MuGFET) demonstrations Date Channel lengthMuGFET type Researcher(s) Organization DGMOSToshihiro Sekigawa, Yutaka HayashiElectrotechnical Laboratory (ETL)19872,000 nmDGMOSToshihiro SekigawaElectrotechnical Laboratory (ETL) 250 nm DGMOS Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh IBM T.J. Watson Research Center 180 nmGAAFETFujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. OkabeToshiba200 nmFinFETDigh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji TakedaHitachi Central Research Laboratory17 nmFinFETDigh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey BokorUniversity of California (Berkeley)200115 nmFinFETChenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King LiuUniversity of California (Berkeley)10 nmFinFETShibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey BokorUniversity of California (Berkeley)3 nmGAAFETHyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan RyuKAIST

Other types of MOSFET + MOSFET demonstrations (other types) Date Channellength(nm) Oxidethickness(nm) MOSFETtype Researcher(s) Organization TFTPaul K. WeimerRCA LaboratoriesGaAsH. Becke, R. Hall, J. WhiteRCA Laboratories100,000TFTT.P. Brody, H.E. KunigWestinghouse ElectricFGMOSDawon Kahng, Simon Min SzeBell Telephone LaboratoriesMNOSH.A. Richard Wegener, A.J. Lincoln, H.C. PaoSperry CorporationBiMOSHung-Chang Lin, Ramachandra R. IyerWestinghouse ElectricBiCMOSHung-Chang Lin, Ramachandra R. Iyer, C.T. HoWestinghouse Electric1969VMOSHitachiDMOSY. Tarui, Y. Hayashi, Toshihiro SekigawaElectrotechnical Laboratory (ETL)ISFETPiet BergveldUniversity of Twente1000DMOSY. Tarui, Y. Hayashi, Toshihiro SekigawaElectrotechnical Laboratory (ETL) 1977VDMOSJohn Louis MollHP LabsLDMOSHitachiIGBTBantval Jayant Baliga, Margaret LazeriGeneral Electric2000BiCMOSH. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. NishioHitachi300K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. NamatsuNippon Telegraph and Telephone1000BiCMOSH. Momose, Hideki Shibata, S. Saitoh, Jun-ichi MiyamotoToshiba908.3Han-Sheng Lee, L.C. PuzioGeneral Motors60Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. SmithMIT10Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. BasavaiahIBM T.J. Watson Research Center800BiCMOSRobert H. Havemann, R. E. Eklund, Hiep V. TranTexas Instruments30EJ-MOSFETHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC199832 199988EJ-MOSFETHisao Kawaura, Toshitsugu Sakamoto, Toshio Baba

Commercial products using micro-scale MOSFETs Products featuring 20 μm manufacturing process RCA's CD4000 series of integrated circuits (ICs) beginning in 1968.

Products featuring 10 μm manufacturing process

Intel 4004, the first single-chip microprocessor CPU, launched in 1971. Intel 8008 CPU launched in 1972.

Products featuring 8 μm manufacturing process Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970. MOS Technology 6502 1 MHz CPU launched in 1975.

Products featuring 6 μm manufacturing process

Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973. Intel 8080 CPU launched in 1974 was manufactured using this process. The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977. MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982. MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982 (5 μm).

Products featuring 3 μm manufacturing process

Intel 8085 CPU launched in 1976. Intel 8086 CPU launched in 1978. Intel 8088 CPU launched in 1979. Motorola 68000 8 MHz CPU launched in 1979 (3.5 μm).

Products featuring 1.5 μm manufacturing process

NEC's 64kb SRAM memory chip in 1981. Intel 80286 CPU launched in 1982. The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Alice that were manufactured using a 1.5 μm CMOS process.

Products featuring 1 μm manufacturing process

NTT's DRAM memory chips, including its 64kb chip in 1979 and 256kb chip in 1980. NEC's 1Mb DRAM memory chip in 1984. Intel 80386 CPU launched in 1985.

Products featuring 800 nm manufacturing process

NTT's 1Mb DRAM memory chip in 1984. NEC and Toshiba used this process for their 4Mb DRAM memory chips in 1986. Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4Mb DRAM memory chips in 1987. Toshiba's 4Mb EPROM memory chip in 1987. Hitachi, Mitsubishi and Toshiba used this process for their 1Mb SRAM memory chips in 1987. Intel 486 CPU launched in 1989. microSPARC I launched in 1992. First Intel P5 Pentium CPUs at 60 MHz and 66 MHz launched in 1993.

Products featuring 600 nm manufacturing process

Mitsubishi Electric, Toshiba and NEC introduced 16Mb DRAM memory chips manufactured with a 600nm process in 1989. NEC's 16Mb EPROM memory chip in 1990. Mitsubishi's 16Mb flash memory chip in 1991. Intel 80486DX4 CPU launched in 1994. IBM/Motorola PowerPC 601, the first PowerPC chip, was produced in 0.6 μm. Intel Pentium CPUs at 75 MHz, 90 MHz and 100 MHz.

Products featuring 350 nm manufacturing process

Sony's 16Mb SRAM memory chip in 1994. NEC VR4300 (1995), used in the Nintendo 64 game console. Intel Pentium Pro (1995), Pentium (P54CS, 1995), and initial Pentium II CPUs (Klamath, 1997). AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs. Parallax Propeller, 8 core microcontroller.

Products featuring 250 nm manufacturing process

Hitachi's 16Mb SRAM memory chip in 1993. Hitachi and NEC introduced 256Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994. NEC's 1Gb DRAM memory chip in 1995. Hitachi's 128Mb NAND flash memory chip in 1996. DEC Alpha 21264A, which was made commercially available in 1999. AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998. AMD K6-III "Sharptooth" used 250 nm. Mobile Pentium MMX Tillamook, released in August 1997. Pentium II Deschutes. Dreamcast console's Hitachi SH-4 CPU and PowerVR2 GPU, released in 1998. Pentium III Katmai. Initial PlayStation 2's Emotion Engine CPU.

Processors using 180 nm manufacturing technology

Intel Coppermine E- October 1999 Sony PlayStation 2 console's Emotion Engine and Graphics Synthesizer – March 2000 ATI Radeon R100 and RV100 Radeon 7000 – 2000 AMD Athlon Thunderbird – June 2000 Intel Celeron (Willamette) – May 2002 Motorola PowerPC 7445 and 7455 (Apollo 6) – January 2002

Processors using 130 nm manufacturing technology

Fujitsu SPARC64 V – 2001Krewell, Kevin (21 October 2002). "Fujitsu's SPARC64 V Is Real Deal". Microprocessor Report. Gekko by IBM and Nintendo (GameCube console) – 2001 Motorola PowerPC 7447 and 7457 – 2002 IBM PowerPC G5 970 – October 2002 – June 2003 Intel Pentium III Tualatin and Coppermine – 2001-04 Intel Celeron Tualatin-256 – 2001-10-02 Intel Pentium M Banias – 2003-03-12 Intel Pentium 4 Northwood- 2002-01-07 Intel Celeron Northwood-128 – 2002-09-18 Intel Xeon Prestonia and Gallatin – 2002-02-25 VIA C3 – 2001 AMD Athlon XP Thoroughbred, Thorton, and Barton AMD Athlon MP Thoroughbred – 2002-08-27 AMD Athlon XP-M Thoroughbred, Barton, and Dublin AMD Duron Applebred – 2003-08-21 AMD K7 Sempron Thoroughbred-B, Thorton, and Barton – 2004-07-28 AMD K8 Sempron Paris – 2004-07-28 AMD Athlon 64 Clawhammer and Newcastle – 2003-09-23 AMD Opteron Sledgehammer – 2003-06-30 Elbrus 2000 1891ВМ4Я (1891VM4YA) – 2008-04-27 MCST-R500S 1891BM3 – 2008-07-27 Vortex 86SX –

Commercial products using nano-scale MOSFETs

Chips using 90 nm manufacturing technology

Sony–Toshiba Emotion Engine+Graphics Synthesizer (PlayStation 2) – 2003 IBM PowerPC G5 970FX – 2004 Elpida Memory's 90 nm DDR2 SDRAM process – 2005 IBM PowerPC G5 970MP – 2005 IBM PowerPC G5 970GX – 2005 IBM Waternoose Xbox 360 Processor – 2005 IBM–Sony–Toshiba Cell processor – 2005 Intel Pentium 4 Prescott – 2004-02 Intel Celeron D Prescott-256 – 2004-05 Intel Pentium M Dothan – 2004-05 Intel Celeron M Dothan-1024 – 2004-08 Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville – 2004-06 Intel Pentium D Smithfield – 2005-05 AMD Athlon 64 Winchester, Venice, San Diego, Orleans – 2004-10 AMD Athlon 64 X2 Manchester, Toledo, Windsor – 2005-05 AMD Sempron Palermo and Manila – 2004-08 AMD Turion 64 Lancaster and Richmond – 2005-03 AMD Turion 64 X2 Taylor and Trinidad – 2006-05 AMD Opteron Venus, Troy, and Athens – 2005-08 AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa VIA C7 – 2005-05 Loongson (Godson) 2Е STLS2E02 – 2007-04 Loongson (Godson) 2F STLS2F02 – 2008-07 MCST-4R – 2010-12 Elbrus-2C+ – 2011-11

Processors using 65 nm manufacturing technology

Sony–Toshiba EE+GS (PStwo) – 2005 Intel Pentium 4 (Cedar Mill) – 2006-01-16 Intel Pentium D 900-series – 2006-01-16 Intel Celeron D (Cedar Mill cores) – 2006-05-28